Show simple item record Serry, Mohamed Rubin, Andrew Mohamed, Abdo Sedky, Sherif 2019-02-20T08:11:28Z 2019-02-20T22:00:19Z 2011-03-01 en_US 2014-07-29 2019-02-20
dc.identifier.isbn US8791021B2 en_US
dc.description US8791021B2 en_US
dc.description.abstract Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF6/O2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from −80 degrees Celsius to −140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices. en_US
dc.format.extent 20 p. en_US
dc.format.medium journals (periodicals) en_US
dc.language.iso en en_US
dc.publisher USPTO en_US
dc.subject Silicon Germanium, Deep Etching, DRIE, Silicon, Mask, Cryogenic, MEMS, High-resolution en_US
dc.subject.classification Patent en_US
dc.title Silicon germanium mask for deep silicon etching en_US
dc.type Text en_US
dc.subject.discipline Electronics Engineering en_US
dc.rights.access This item is available en_US
dc.contributor.department American University in Cairo. Dept. of Mechanical Engineering en_US USA en_US

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    This collection includes research findings, publications, and presentations authored by faculty staff at AUC.

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